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| NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector-Base Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter-Base Voltage, VEBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V NTE288 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Device Dissipation @ TA = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5mW/C Total Device Dissipation @ TC = +25C, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/mW Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/mW Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage NTE287 NTE288 Collector Cutoff Current NTE287 NTE288 Emitter Cutoff Current NTE287 NTE288 IEBO VEB = 6V, IC = 0 VEB = 3V, IC = 0 ICBO VCB = 200V, IE = 0 V(BR)CEO IC = 1mA, IB = 0, Note 1 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 100A, IC = 0 300 300 6 5 - - - - - - - - - - - - - - - - 0.1 0.25 0.1 0.1 V V V V A A A A Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain NTE287 & NTE288 hFE IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V NTE287 NTE288 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Small-Signal Characteristics Current Gain - Bandwidth Product Collector-Base Capacitance NTE287 NTE288 fT Ccb IC = 10mA, VCE = 20V, f = 100MHz VCB = 20V, IE = 0, f = 1MHz 50 - - - - - - 3 6 MHz pF pF VCE(sat) IC = 20mA, IB = 2mA VBE(sat) IC = 20mA, IB = 2mA IC = 30mA, VCE = 10V 25 40 40 25 - - - - - - - - - - - - 0.5 0.9 V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max EBC .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE288
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